Toshiba Corporation today announced the launch of low-height SO6L package gate-drive photocouplers for use in driving small- to medium-power IGBTs and power MOSFETs. Mass production is scheduled for the end of January.
The new products, “TLP5701″ for driving small-power IGBTs and “TLP5702″ for driving middle-power IGBTs, are the first Toshiba photocouplers to use the low-height SO6L package. At only 54% of Toshiba products that use the SDIP6 package, the new devices will contribute to development of thinner sets. In spite of their low height, the devices guarantee a creepage distance of 8mm, making them suitable for applications requiring higher isolation specs.
“TLP5701″ and “TLP5702″ achieve low supply current of 2.0mA (max) and low power consumption by utilizing BiCMOS process technology. Combined with an original high-power, high-reliability infrared LED, they can be used in a wide range of applications, including those that require high thermo-stability, such as factory automation and home photovoltaic power systems, digital home appliances and control equipment. Maximum propagation delay time and propagation delay skew are guaranteed within the defined operation temperature range (up to 110 degrees Centigrade), making it possible to reduce dead time in the inverter circuit, which can secure higher operating efficiency.
Key Specifications of New Products
|Peak Output Current||IOP=±0.6A(max)||IOP=±2.5A(max)|
|Power Supply Voltage||Vcc=10V to 30V||Vcc=15V to 30V|
|Threshold Input Current||IFLH=5mA(max)|
|Propagation Delay Time||tpLH/tpHL＝500ns(max)||tpLH/tpHL＝200ns(max)|
|Propagation Delay Skew||tpsk＝-80 to 80ns|
|Operation Temperature Range||Topr=-40°C to 110°C|
|Applications||For driving small-size power IGBTs (up to 20A class) and power MOSFETs.
||For driving middle-size power IGBTs (up to 80A class) and power MOSFETs.